SEMICONDUCTING SEMIINSULATING REVERSIBILITY IN BULK GAAS

被引：40

作者：

LOOK, DC

YU, PW

THEIS, WM

FORD, W

MATHUR, G

SIZELOVE, JR

LEE, DH

LI, SS

机构：

[1] USAF,WRIGHT AERONAUT LABS,AADR,WRIGHT PATTERSON AFB,OH 45433

[2] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

[3] HARRIS MICROWAVE SEMICOND,MILPITAS,CA 95035

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 17期

关键词：

D O I：

10.1063/1.97429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1083 / 1085

页数：3

相关论文

共 14 条

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330
[2] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7346 - 7348
[3] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343
[4] DRISCOLL CMH, 1972, I PHYSICS C SERIES, V16, P377
[5] FORD W, 1986, UNPUB SEMIINSULATING
[6] REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE
HURLE, DTJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) : 613 - 626
[7] LAGOWSKI J, 1982, SEMI INSULATING 3 5, P154
[8] A DOMINANT ELECTRICAL DEFECT IN GAAS
LOOK, DC
WALTERS, DC
MEYER, JR
[J]. SOLID STATE COMMUNICATIONS, 1982, 42 (10) : 745 - 748
[9] A STUDY OF THE 0.1-EV CONVERSION ACCEPTOR IN GAAS
LOOK, DC
POMRENKE, GS
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3249 - 3254
[10] LOOK DC, 1983, SEMICONDUCT SEMIMET, V19, P93