ELECTRICAL PROPERTIES OF CARBON-DOPED GALLIUM-PHOSPHIDE

被引：16

作者：

BORTFELD, DP

CURTIS, BJ

MEIER, H

机构：

来源：

关键词：

D O I：

10.1063/1.1661261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1293 / &

共 8 条

[1] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP
CASEY, HC
ERMANIS, F
WOLFSTIRN, KB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +
[2] ELECTRICAL PROPERTIES OF SN-DOPED GAP
CASEY, HC
ERMANIS, F
LUTHER, LC
DAWSON, LR
VERLEUR, HW
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2130 - &
[3] SHALLOW ACCEPTOR STATES IN ZNTE AND CDTE
CROWDER, BL
HAMMER, WN
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 541 - &
[4] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE
DEAN, PJ
FROSCH, CJ
HENRY, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5631 - &
[5] PAIR SPECTRA INVOLVING DONOR AND/OR ACCEPTOR GERMANIUM IN GAP
GERSHENZON, M
TRUMBORE, FA
MIKULYAK, RM
KOWALCHIK, M
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 486 - +
[6] KRAUSBAUER L, PRIVATE COMMUNICATIO
[7] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1
[8] LATTICE MOBILITY OF HOLES IN III-V-COMPOUNDS
WILEY, JD
DIDOMENICO, M
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (02): : 427 - +