ANNEALING AND HYDROGENATION BEHAVIOR OF EVAPORATED AND SPUTTERED HIGH-PURITY AMORPHOUS-SILICON FILMS

被引：5

作者：

KNIFFLER, N

MULLER, WW

PIRRUNG, JM

HANISCH, N

SCHRODER, B

GEIGER, J

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814178

中图分类号：

学科分类号：

摘要：

引用

页码：811 / 814

页数：4

共 9 条

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[6] SOME PROPERTIES OF EVAPORATED AMORPHOUS SILICON MADE WITH ATOMIC-HYDROGEN [J].

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[7] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

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