ULTRA-HIGH-RESOLUTION HVEM (H-1500) NEWLY CONSTRUCTED AT NIRIM .2. INSTRUMENTATION

被引：38

作者：

MATSUI, Y ^{[1
]}

HORIUCHI, S ^{[1
]}

BANDO, Y ^{[1
]}

KITAMI, Y ^{[1
]}

YOKOYAMA, M ^{[1
]}

SUEHARA, S ^{[1
]}

MATSUI, I ^{[1
]}

KATSUTA, T ^{[1
]}

机构：

[1] HITACHI LTD,NAKA WORKS,KATSUTA,IBARAKI 312,JAPAN

来源：

ULTRAMICROSCOPY | 1991年 / 39卷 / 1-4期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1016/0304-3991(91)90177-8

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Basic specifications and some experimental data of a new ultra-high-resolution HVEM (Hitachi H-1500), with a maximum accelerating voltage of 1300 kV, are described. A lattice fringe image of 0.07 nm is obtained from thin gold film, indicating excellent mechanical and electrical stability of the microscope. Spherical and chromatic aberration coefficients of the objective lens are 1.85 and 3.4 mm, respectively, at 1300 kV; and a theoretical point-to-point resolution, defined by the first-zero point of the contrast transfer function (CTF) curve under the Scherzer condition, is about 0.104 nm. A crystal structure image of silicon, in which each silicon site is observed as a black dot, is successfully obtained and the image agrees fairly with the results of computer simulations based on the above optical parameters.

引用

页码：8 / 20

页数：13

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