MICROSTRUCTURE OF SILICON-ON-INSULATOR STRUCTURES PRODUCED BY HIGH-DOSE NITROGEN IMPLANTATION OF SILICON

被引：8

作者：

MEEKISON, CD

BOOKER, GR

REESON, KJ

HEMMENT, PLF

CHATER, RJ

KILNER, JA

DAVIS, JR

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MET & MAT SCI,LONDON SW7 2BP,ENGLAND

[3] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

VACUUM | 1986年 / 36卷 / 11-12期

关键词：

We should like to acknowledge support from the Science and Engineering Research Council and British Telecom Research Centre; Martlesham Heath;

D O I：

10.1016/0042-207X(86)90142-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：925 / 928

页数：4

共 9 条

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[7] FORMATION MECHANISM AND STRUCTURES OF BURIED OXY-NITRIDE LAYERS PRODUCED BY ION-BEAM SYNTHESIS [J].

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