TRANSMISSION ELECTRON-MICROSCOPY AND AUGER-ELECTRON SPECTROSCOPY OF SILICON-ON-INSULATOR STRUCTURES PREPARED BY HIGH-DOSE IMPLANTATION OF NITROGEN

被引：55

作者：

PETRUZZELLO, J

MCGEE, TF

FROMMER, MH

RUMENNIK, V

WALTERS, PA

CHOU, CJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.336228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4605 / 4613

页数：9

共 12 条

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