FORMATION OF SILICON-ON-INSULATOR STRUCTURES BY IMPLANTED NITROGEN

被引：35

作者：

NESBIT, L

STIFFLER, S

SLUSSER, G

VINTON, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

D O I：

10.1149/1.2113652

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2713 / 2721

页数：9

共 21 条

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