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THE OXIDATION-INHIBITION IN NITROGEN-IMPLANTED SILICON
被引:37
作者
:
JOSQUIN, WJMJ
论文数:
0
引用数:
0
h-index:
0
JOSQUIN, WJMJ
TAMMINGA, Y
论文数:
0
引用数:
0
h-index:
0
TAMMINGA, Y
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1982年
/ 129卷
/ 08期
关键词
:
D O I
:
10.1149/1.2124298
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1803 / 1811
页数:9
相关论文
共 15 条
[1]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
: 3770
-
&
[2]
DEZALDIVAR JS, 1981, P BADEN BADEN C
[3]
ENOMOTO T, 1978, JPN J APPL PHYS, V4, P1048
[4]
CONVERSION OF SILICON NITRIDE INTO SILICON DIOXIDE THROUGH INFLUENCE OF OXYGEN
FRANZ, I
论文数:
0
引用数:
0
h-index:
0
FRANZ, I
LANGHEINRICH, W
论文数:
0
引用数:
0
h-index:
0
LANGHEINRICH, W
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(06)
: 499
-
+
[5]
THERMAL OXIDATION OF SILICON AFTER ION-IMPLANTATION
FRITZSCH.CR
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL,INST ANGEW FESTKORPERPHYS,D-78 FREIBURG,WEST GERMANY
FRAUNHOFER GESELL,INST ANGEW FESTKORPERPHYS,D-78 FREIBURG,WEST GERMANY
FRITZSCH.CR
ROTHEMUN.W
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL,INST ANGEW FESTKORPERPHYS,D-78 FREIBURG,WEST GERMANY
FRAUNHOFER GESELL,INST ANGEW FESTKORPERPHYS,D-78 FREIBURG,WEST GERMANY
ROTHEMUN.W
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(11)
: 1603
-
1605
[6]
THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
SHINODA, M
论文数:
0
引用数:
0
h-index:
0
SHINODA, M
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(05)
: 330
-
331
[7]
VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
HIJIYA, S
论文数:
0
引用数:
0
h-index:
0
HIJIYA, S
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
SHINODA, M
论文数:
0
引用数:
0
h-index:
0
SHINODA, M
FUKUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FUKUKAWA, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(03)
: 448
-
452
[8]
JOSQUIN WJM, 1978, P ION BEAM MODIFICAT, V3, P1433
[9]
INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS
KENNEDY, EF
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
KENNEDY, EF
CSEPREGI, L
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
CSEPREGI, L
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
MAYER, JW
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
SIGMON, TW
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(10)
: 4241
-
4246
[10]
FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS
KOOI, E
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
KOOI, E
VANLIEROP, JG
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
VANLIEROP, JG
APPELS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
APPELS, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(07)
: 1117
-
1120
←
1
2
→
共 15 条
[1]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
: 3770
-
&
[2]
DEZALDIVAR JS, 1981, P BADEN BADEN C
[3]
ENOMOTO T, 1978, JPN J APPL PHYS, V4, P1048
[4]
CONVERSION OF SILICON NITRIDE INTO SILICON DIOXIDE THROUGH INFLUENCE OF OXYGEN
FRANZ, I
论文数:
0
引用数:
0
h-index:
0
FRANZ, I
LANGHEINRICH, W
论文数:
0
引用数:
0
h-index:
0
LANGHEINRICH, W
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(06)
: 499
-
+
[5]
THERMAL OXIDATION OF SILICON AFTER ION-IMPLANTATION
FRITZSCH.CR
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL,INST ANGEW FESTKORPERPHYS,D-78 FREIBURG,WEST GERMANY
FRAUNHOFER GESELL,INST ANGEW FESTKORPERPHYS,D-78 FREIBURG,WEST GERMANY
FRITZSCH.CR
ROTHEMUN.W
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER GESELL,INST ANGEW FESTKORPERPHYS,D-78 FREIBURG,WEST GERMANY
FRAUNHOFER GESELL,INST ANGEW FESTKORPERPHYS,D-78 FREIBURG,WEST GERMANY
ROTHEMUN.W
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(11)
: 1603
-
1605
[6]
THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
SHINODA, M
论文数:
0
引用数:
0
h-index:
0
SHINODA, M
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(05)
: 330
-
331
[7]
VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
HIJIYA, S
论文数:
0
引用数:
0
h-index:
0
HIJIYA, S
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
SHINODA, M
论文数:
0
引用数:
0
h-index:
0
SHINODA, M
FUKUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FUKUKAWA, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(03)
: 448
-
452
[8]
JOSQUIN WJM, 1978, P ION BEAM MODIFICAT, V3, P1433
[9]
INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS
KENNEDY, EF
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
KENNEDY, EF
CSEPREGI, L
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
CSEPREGI, L
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
MAYER, JW
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
SIGMON, TW
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(10)
: 4241
-
4246
[10]
FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS
KOOI, E
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
KOOI, E
VANLIEROP, JG
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
VANLIEROP, JG
APPELS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
APPELS, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(07)
: 1117
-
1120
←
1
2
→