THE OXIDATION-INHIBITION IN NITROGEN-IMPLANTED SILICON

[1] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[2] DEZALDIVAR JS, 1981, P BADEN BADEN C

[3] ENOMOTO T, 1978, JPN J APPL PHYS, V4, P1048

[4] CONVERSION OF SILICON NITRIDE INTO SILICON DIOXIDE THROUGH INFLUENCE OF OXYGEN [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 499 - +

[5] THERMAL OXIDATION OF SILICON AFTER ION-IMPLANTATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1603 - 1605

[6] THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 330 - 331

[7] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 448 - 452

[8] JOSQUIN WJM, 1978, P ION BEAM MODIFICAT, V3, P1433

[9] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[10] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1117 - 1120

[1] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[2] DEZALDIVAR JS, 1981, P BADEN BADEN C

[3] ENOMOTO T, 1978, JPN J APPL PHYS, V4, P1048

[4] CONVERSION OF SILICON NITRIDE INTO SILICON DIOXIDE THROUGH INFLUENCE OF OXYGEN [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 499 - +

[5] THERMAL OXIDATION OF SILICON AFTER ION-IMPLANTATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1603 - 1605

[6] THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 330 - 331

[7] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 448 - 452

[8] JOSQUIN WJM, 1978, P ION BEAM MODIFICAT, V3, P1433

[9] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[10] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1117 - 1120