HIGH-ENERGY ELECTRON INDUCED DISPLACEMENT DAMAGE IN SILICON

被引:79
作者
DALE, CJ
MARSHALL, PW
BURKE, EA
SUMMERS, GP
WOLICKI, EA
机构
[1] SACHS FREEMAN ASSOCIATES INC,LANDOVER,MD 20785
[2] MISSION RES CORP,SAN DIEGO,CA 92123
[3] WOLICKI ASSOCIATES INC,ALEXANDRIA,VA 22307
关键词
D O I
10.1109/23.25441
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transistors, Bipolar
引用
收藏
页码:1208 / 1214
页数:7
相关论文
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