COMPARISON OF PROTON AND NEUTRON CARRIER REMOVAL RATES

被引:29
作者
PEASE, RL [1 ]
ENLOW, EW [1 ]
DINGER, GL [1 ]
MARSHALL, P [1 ]
机构
[1] SACHS FREEMAN ASSOCIATES,LANDOVER,MD 20785
关键词
D O I
10.1109/TNS.1987.4337443
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1140 / 1146
页数:7
相关论文
共 8 条
[1]   DESIGN CURVES FOR PREDICTING FAST-NEUTRON-INDUCED RESISTIVITY CHANGES IN SILICON [J].
BUEHLER, MG .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (10) :1741-&
[2]  
BURKE EA, 1986, IEEE T NUC SCI, V33
[3]  
GALLOWAY KF, POWER MOSFETS FAST N
[4]  
ROBBINS TC, 1981, IEEE T NUC SCI, V28
[5]   INTRODUCTION RATES OF ELECTRICALLY ACTIVE DEFECTS IN N- AND P-TYPE SILICON BY ELECTRON AND NEUTRON IRRADIATION [J].
STEIN, HJ ;
GERETH, R .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) :2890-+
[6]  
SUMMERS GP, 1986, IEEE T NUC SCI, V33
[7]  
VANLINT VA, 1980, MECHANISMS RAD EFFEC
[8]   CORRELATION OF DISPLACEMENT EFFECTS PRODUCED BY ELECTRONS PROTONS AND NEUTRONS IN SILICON [J].
VANLINT, VAJ ;
GIGAS, G ;
BARENGOLTZ, J .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2663-2668