SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE SILICON

被引：11

作者：

ALEXANDER, MN

HOLCOMB, DF

机构：

[1] Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY

来源：

SOLID STATE COMMUNICATIONS | 1968年 / 6卷 / 06期

关键词：

D O I：

10.1016/0038-1098(68)90155-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A synthesis is given of the experimental evidence concerning the nature of the transition from semiconducting to metallic behavior in n-type silicon as impurity concentration is varied. Two stages in the transition are described; first, the delocatization transition and a second distinct change associated with movement of the Fermi level into the conduction band of the host silicon. © 1968.

引用

页码：355 / +

页数：1

共 17 条

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[8] HOLCOMB DF, TO BE PUBLISHED
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