PSEUDOMORPHIC INYGA1-YAS/GAAS/ALXGA1-XAS SINGLE QUANTUM-WELL SURFACE-EMITTING LASERS WITH INTEGRATED 45-DEGREES BEAM DEFLECTORS

被引:10
作者
KIM, JH [1 ]
LARSSON, A [1 ]
LEE, LP [1 ]
机构
[1] TRW CO INC,DIV APPL TECHNOL SPACE & TECHNOL GRP,REDONDO BEACH,CA 90278
关键词
D O I
10.1063/1.104451
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-degrees beam deflectors fabricated by ion beam etching. 100-mu-m-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-mu-m-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of approximately 20-degrees. The lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.
引用
收藏
页码:7 / 9
页数:3
相关论文
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