CHARACTERIZATION OF STRESS IN DOPED AND UNDOPED POLYCRYSTALLINE SILICON BEFORE AND AFTER ANNEALING OR OXIDATION WITH LASER RAMAN-SPECTROSCOPY

被引：20

作者：

KAWATA, M

NADAHARA, S

SHIOZAWA, J

WATANABE, M

KATODA, T

机构：

[1] Research Center for Advanced Science and Technology, University of Tokyo, Meguro-ku, Tokyo, 153

[2] ULSI Research Center, Toshiba Corporation, Saiwai-ku Kawasaki, Kanagawa, 210, 1 Komukai, Toshiba-cho

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 05期

关键词：

laser Raman spectroscopy; Polycrystalline silicon; stress;

D O I：

10.1007/BF02657998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stress in polycrystalline silicon (poly-Si) was characterized with laser Raman spectroscopy. Effects of diffusion of phosphorus, annealing and oxidation on stress were especially studied. Relaxation of undirectional stress by annealing and oxidation was observed. Undirectional stress was relaxed by heavy doping of phosphorus which made a grain size larger. Compressive stress increased, however, by oxidation in poly-Si with a smaller grain size. © 1990 The Mineral, Metal & Materials Society, Inc.

引用

页码：407 / 411

页数：5

共 14 条

[1] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].