CRYSTALLIZATION-INDUCED STRESS IN SILICON THIN-FILMS

被引：62

作者：

MIURA, H ^{[1
]}

OHTA, H ^{[1
]}

OKAMOTO, N ^{[1
]}

KAGA, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 22期

关键词：

D O I：

10.1063/1.106864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Residual stress change in silicon thin films during crystallization of amorphous silicon is discussed experimentally by detecting the wafer curvature change using a scanning laser microscope. The as-deposited amorphous-silicon film shows compressive stress of about 200 MPa. During a crystallization reaction at about 650-degrees-C, a large tensile stress of about 1000 MPa develops in the film due to film shrinkage. The final residual stress of polycrystalline film depends on the film formation process.

引用

页码：2746 / 2748

页数：3

共 9 条

[1]

ADMACZEWSKA J, 1984, THIN SOLID FILMS, V113, P271

[2]

AWAMURA D, 1987, SPIE, V765, P53

[3] A SIMPLE TECHNIQUE FOR THE DETERMINATION OF MECHANICAL STRAIN IN THIN-FILMS WITH APPLICATIONS TO POLYSILICON [J].