STRUCTURAL-PROPERTIES OF SILICON THIN-FILMS DEPOSITED BY GLOW-DISCHARGE

[1] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[2] RF PLASMA DEPOSITION OF AMORPHOUS-SILICON FILMS FROM SICL4-H2 [J]. THIN SOLID FILMS, 1980, 67 (01) : 103 - 107

[3] Carlson D. E., 1980, POLYCRYSTALLINE AMOR

[4] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 163 - 165

[5] HYDROGEN CONTENT, ELECTRICAL-PROPERTIES AND STABILITY OF GLOW-DISCHARGE AMORPHOUS SILICON [J]. SOLAR ENERGY MATERIALS, 1979, 2 (01): : 93 - 106

[6] Klug H.P., 1974, XRAY DIFFRACTION PRO, V2nd ed.

[7] MICROSTRUCTURE OF PLASMA-DEPOSITED A-SI-H FILMS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 244 - 246

[8] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[9] VEPREK S, J PHYS C

[1] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[2] RF PLASMA DEPOSITION OF AMORPHOUS-SILICON FILMS FROM SICL4-H2 [J]. THIN SOLID FILMS, 1980, 67 (01) : 103 - 107

[3] Carlson D. E., 1980, POLYCRYSTALLINE AMOR

[4] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 163 - 165

[5] HYDROGEN CONTENT, ELECTRICAL-PROPERTIES AND STABILITY OF GLOW-DISCHARGE AMORPHOUS SILICON [J]. SOLAR ENERGY MATERIALS, 1979, 2 (01): : 93 - 106

[6] Klug H.P., 1974, XRAY DIFFRACTION PRO, V2nd ed.

[7] MICROSTRUCTURE OF PLASMA-DEPOSITED A-SI-H FILMS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 244 - 246

[8] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[9] VEPREK S, J PHYS C