AN ISOLATED AL-POLY SI-(P)SI-(N+)SI SWITCHING DEVICE

被引：4

作者：

CHANG, CY

WANG, YD

TZENG, FC

CHEN, CT

WANG, SJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 07期

关键词：

D O I：

10.1016/0038-1101(86)90159-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：735 / 737

页数：3

共 11 条

[1]

BOARD K, 1981, ELECTRON LETT, V17, P4

[2]

CHANG CA, UNPUB

[3] TEMPERATURE-DEPENDENT CHARACTERISTICS OF MBE-GROWN GAAS P+-V-P+-V-N+ REGENERATIVE SWITCHING DEVICE [J].

CHANG, CY ;

WANG, YH ;

LIU, WC ;

LIAO, SA .

ELECTRONICS LETTERS, 1985, 21 (01) :24-25

[4]

CHANG CY, 1985, IEEE ELECTRON DEV LE, V6

[5] EXPERIMENTAL STUDIES OF SWITCHING IN METAL SEMI-INSULATING N-P+ SILICON DEVICES [J].

ELBADRY, A ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :963-966

[6]

GALIGARO RB, 1981, IEE P, V128, P211

[7] BISTABLE IMPEDANCE STATES IN MIS STRUCTURES THROUGH CONTROLLED INVERSION [J].

KROGER, H ;

WEGENER, HAR .

APPLIED PHYSICS LETTERS, 1973, 23 (07) :397-399

[8]

SIMMONS JG, 1983, SOLID ST ELECTRON, V20, P705

[9]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[10]

WU BS, 1985, IEEE T ELECTRON DEV, V32

← 1 2 →