TEMPERATURE-DEPENDENT CHARACTERISTICS OF MBE-GROWN GAAS P+-V-P+-V-N+ REGENERATIVE SWITCHING DEVICE

被引：14

作者：

CHANG, CY

WANG, YH

LIU, WC

LIAO, SA

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 01期

关键词：

D O I：

10.1049/el:19850019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：24 / 25

页数：2

共 11 条

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APPLIED PHYSICS LETTERS, 1981, 39 (04) :340-342

[6] ELECTRIC PROPERTIES OF UNIPOLAR GAAS STRUCTURES WITH ULTRATHIN TRIANGULAR BARRIERS [J].

GOSSARD, AC ;

KAZARINOV, RF ;

LURYI, S ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :832-833

[7] THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .1. PUNCHTHROUGH MODE [J].

HABIB, SED ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1979, 22 (02) :181-192

[8] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J].

MALIK, RJ ;

AUCOIN, TR ;

ROSS, RL ;

BOARD, K ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1980, 16 (22) :836-837

[9] MAJORITY-CARRIER CAMEL DIODE [J].

SHANNON, JM .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :63-65

[10] REGENERATIVE SWITCHING DEVICE USING MBE-GROWN GALLIUM-ARSENIDE [J].

WOOD, CEC ;

EASTMAN, LF ;

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MALIK, R .

ELECTRONICS LETTERS, 1982, 18 (15) :676-677

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