HOPPING CONDUCTION IN UNDOPED LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS IN RELATION TO THE FILM DEPOSITION CONDITIONS

被引：5

作者：

DIMITRIADIS, CA ^{[1
]}

COXON, PA ^{[1
]}

机构：

[1] GEC RES LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1601 / 1604

页数：4

共 15 条

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[10] HIGH-PERFORMANCE THIN-FILM TRANSISTORS FROM OPTIMIZED POLYCRYSTALLINE SILICON FILMS [J].

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