EXPERIMENTAL-STUDY OF NONLINEAR CURRENT-VOLTAGE BEHAVIOR IN UNDOPED POLYCRYSTALLINE SILICON

被引：6

作者：

KIM, DM

QIAN, F

AHMED, SS

PARK, HK

SACHITANO, JL

机构：

[1] INTEL CORP INC,TECHNOL & DEV LAB,ALOHA,OR 97007

[2] TEKTRONIX INC,APPL RES LAB,BEAVERTON,OR 97077

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2419 / 2421

页数：3

共 10 条

[1] KATO K, 1982, IEEE T ELECTRON DEV, V29, P1161
[2] THEORY OF CONDUCTION IN POLYSILICON - DRIFT-DIFFUSION APPROACH IN CRYSTALLINE-AMORPHOUS-CRYSTALLINE SEMICONDUCTOR SYSTEM .1. SMALL-SIGNAL THEORY
KIM, DM
KHONDKER, AN
AHMED, SS
SHAH, RR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 480 - 493
[3] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS
LU, NCC
GERZBERG, L
LU, CY
MEINDL, JD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 818 - 830
[4] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON
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SHICHIJO, H
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ELAHY, M
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LAM, HW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 258 - 281
[5] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY
MANDURAH, MM
SARASWAT, KC
KAMINS, TI
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1163 - 1171
[6] CHARACTERIZATION OF POLYCRYSTALLINE SILICON MOS-TRANSISTORS AND ITS FILM PROPERTIES .1.
ONGA, S
MIZUTANI, Y
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KASHIWAGI, M
SHIBATA, K
KOHYAMA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1982, 21 (10): : 1472 - 1478
[7] Pankove JI, 1975, OPTICAL PROCESSES SE, P34
[8] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
SETO, JYW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254
[9] SHICHIJO H, 1984, FEB P MAT RES SOC M
[10] THERMIONIC EMISSION DIFFUSION-MODEL OF CURRENT CONDUCTION IN POLYCRYSTALLINE SILICON AND TEMPERATURE-DEPENDENCE OF MOBILITY
SINGH, SN
KISHORE, R
SINGH, PK
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2793 - 2801

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