共 7 条
- [2] ELECTRONIC-PROPERTIES OF THE INTERFACE BETWEEN SI AND TIO2 DEPOSITED AT VERY LOW-TEMPERATURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09): : 1288 - 1291
- [4] SAMSONOV GV, 1973, OXIDE HDB, P316