STRUCTURAL STUDIES OF HGCDTE GROWN BY MOCVD ON LATTICE-MATCHED SUBSTRATES

被引：7

作者：

BEVAN, MJ

GREGGI, J

DOYLE, NJ

机构：

[1] Westinghouse Science & Technology Center, Pittsburgh

来源：

JOURNAL OF MATERIALS RESEARCH | 1990年 / 5卷 / 07期

关键词：

D O I：

10.1557/JMR.1990.1475

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Improved structural quality Hg1–xCdxTe epitaxial films have been grown by metal organic chemical vapor deposition (MOCVD) using the interdiffused multilayer process (IMP) on lattice-matched CdZnTe substrates at temperatures above 400 °C with diethyltelluride. Double-crystal rocking curve data with values as low as 25 arcsec correlated with cross-sectional transmission electron micrographs. The process of growing alternate layers of HgTe/CdTe for improved compositional uniformity, and the inherent mismatch, was not detrimental to the structural quality, which was limited by that of the substrate. © 1990, Materials Research Society. All rights reserved.

引用

页码：1475 / 1479

页数：5

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