STUDIES ON EVAPORATED INDIUM TIN OXIDE (ITO) SILICON JUNCTIONS AND AN ESTIMATION OF ITO WORK FUNCTION

被引：40

作者：

BALASUBRAMANIAN, N

SUBRAHMANYAM, A

机构：

[1] Department of Physics, Indian Institute of Technology

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 01期

关键词：

D O I：

10.1149/1.2085565

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：322 / 324

页数：3

共 13 条

[1] SPRAY-DEPOSITED ITO-SILICON SIS HETEROJUNCTION SOLAR-CELLS
ASHOK, S
SHARMA, PP
FONASH, SJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 725 - 730
[2] ON RESOLVING THE ANOMALY OF INDIUM-TIN OXIDE SILICON JUNCTIONS
ASHOK, S
FONASH, SJ
SINGH, R
WILEY, P
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 184 - 186
[3] ELECTRICAL AND OPTICAL-PROPERTIES OF REACTIVELY EVAPORATED INDIUM TIN OXIDE (ITO) FILMS - DEPENDENCE ON SUBSTRATE-TEMPERATURE AND TIN CONCENTRATION
BALASUBRAMANIAN, N
SUBRAHMANYAM, A
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1989, 22 (01) : 206 - 209
[4] HIGH-PRESSURE OXIDATION OF SI(100) FOR PRODUCTION OF ULTRATHIN OXIDE METAL-INSULATOR SEMICONDUCTOR DIODES
BASU, N
BHAT, KN
[J]. THIN SOLID FILMS, 1988, 156 (02) : 243 - 257
[5] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[6] CARD HC, 1980, I PHYS C SER, V50, P140
[7] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON
DUBOW, JB
BURK, DE
SITES, JR
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 494 - 496
[8] EFFICIENT ELECTRON-BEAM-DEPOSITED ITO-N-SI SOLAR-CELLS
FENG, T
GHOSH, AK
FISHMAN, C
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4972 - 4974
[9] EFFICIENT SPRAYED IN2O3-SN N-TYPE SILICON HETEROJUNCTION SOLAR-CELL
MANIFACIER, JC
SZEPESSY, L
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 459 - 462
[10] WORK FUNCTION OF IN2O3 FILM AS DETERMINED FROM INTERNAL PHOTOEMISSION
PAN, CA
MA, TP
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 714 - 716

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