DETERMINATION OF INTRINSIC FET PARAMETERS USING CIRCUIT PARTITIONING APPROACH

被引：19

作者：

VICKES, HO ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,DIV NETWORK THEORY,S-41296 GOTHENBURG,SWEDEN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1991年 / 39卷 / 02期

关键词：

D O I：

10.1109/22.102985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique useful in extracting intrinsic parameters for a compound semiconductor FET is presented. The technique makes use of a method provided by Dambrine et al. [8]. A modified active circuit that accounts for charge accumulation in the conducting channel is presented. The model has the further advantage of using control voltage modeling in agreement with the Curtice convention for large-signal analysis. The equations are presented for each active element as a function of the intrinsic y parameters. Measurements verify the parameter extraction technique with the circuit topology used and show good results.

引用

页码：363 / 366

页数：4