MICROWAVE WIDEBAND MODEL OF GAAS DUAL GATE MESFETS

被引：37

作者：

TSIRONIS, C ^{[1
]}

MEIERER, R ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICONDUCT ELECTR,D-5100 AACHEN,FED REP GER

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1982年 / 30卷 / 03期

关键词：

D O I：

10.1109/TMTT.1982.1131058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：243 / 251

页数：9

共 19 条

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[2]

CHEN PT, 1977, IEEE T MICROWAVE THE, V27, P411

[3]

CHU AS, 1980, MTTS S P WASHINGTON, P383

[4] MICROWAVE CHARACTERIZATION OF GAAS MESFET AND VERIFICATION OF DEVICE MODEL [J].

COOPER, JF ;

GUPTA, MS .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (03) :325-329

[5]

CRIPPS SC, 1977, 7TH P EUR MICR C COP, P101

[6] EQUIVALENT CIRCUIT OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR AT MICROWAVE-FREQUENCIES [J].

DAWSON, RH .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, MT23 (06) :499-501

[7] GAAS DUAL-GATE MESFETS [J].

FURUTSUKA, T ;

OGAWA, M ;

KAWAMURA, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :580-586

[8]

JOSHI JS, 1980, MTTS S P WASHINGTON, P379

[9] MICROWAVE MESFET MIXER [J].

KURITA, O ;

MORITA, K .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :361-366

[10]

LIECHTI C, P ISSCC 1972, P158

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