CHEMOMECHANICAL POLISHING OF GALLIUM-ARSENIDE TO SUBNANOMETER SURFACE FINISH - AN EVALUATION OF HYDROGEN-PEROXIDE AND DIBROMINE AS REAGENTS

被引：4

作者：

MCMEEKIN, SG

ROBERTSON, M

MCGHEE, L

WINFIELD, JM

机构：

[1] LOGITECH LTD,OLD KILPATRICK G60 5EU,DUNBARTON,SCOTLAND

[2] UNIV GLASGOW,DEPT CHEM,GLASGOW G12 8QQ,SCOTLAND

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1992年 / 2卷 / 03期

关键词：

CHEMOMECHANICAL POLISHING; GALLIUM ARSENIDE; HYDROGEN PEROXIDE;

D O I：

10.1039/jm9920200367

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hydrogen peroxide is an effective chemical polish for gallium arsenide in the pH range 6-8.5. The polished gallium arsenide surface has a surface roughness of < 1 nm and is superior to that obtained from polishing with dibromine-methanol solutions.

引用

页码：367 / &

共 5 条

[1] BROMINE METHANOL POLISHING OF LESS-THAN-100-GREATER-THAN INP .2. DEPENDENCE ON BROMINE CONCENTRATION [J].

CHIN, BH ;

LEE, KL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) :663-666

[2] EVALUATION OF A NEW POLISH FOR GALLIUM ARSENIDE USING A PEROXIDE-ALKALINE SOLUTION [J].

DYMENT, JC ;

ROZGONYI, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1346-&

[3] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J].

FULLER, CS ;

ALLISON, HW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) :880-880

[4]

Greenwood NN, 1984, CHEM ELEMENTS

[5] CHEMICAL POLISHING OF SEMICONDUCTORS [J].

TUCK, B .

JOURNAL OF MATERIALS SCIENCE, 1975, 10 (02) :321-339

← 1 →