A simple and efficient microwave launcher for plasma production

被引:5
作者
Hatta, Akimitsu [1 ]
Yasaka, Yasuyoshi [1 ]
Itatani, Ryohei [1 ]
机构
[1] Kyoto Univ, Dept Elect, Kyoto 606, Japan
关键词
D O I
10.1088/0963-0252/1/1/003
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
A simple and efficient microwave launcher, using an adjustable monopole antenna and coaxial cable, is designed and tested for the application to ECR plasma production.
引用
收藏
页码:13 / 17
页数:5
相关论文
共 10 条
[1]   A 915 MHZ 2.45 GHZ ECR PLASMA SOURCE FOR LARGE AREA ION-BEAM AND PLASMA PROCESSING [J].
ASMUSSEN, J ;
HOPWOOD, J ;
SZE, FC .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1990, 61 (01) :250-252
[2]   30-CM ELECTRON-CYCLOTRON PLASMA GENERATOR [J].
GOEDE, H .
JOURNAL OF SPACECRAFT AND ROCKETS, 1987, 24 (05) :437-443
[3]   ELECTRON-TEMPERATURE MEASUREMENT USING INTENSITY RATIO OF H-2 FULCHER ALPHA(D3-PI-U-ALPHA-3-SIGMA-G) EMISSIONS IN A WEAKLY IONIZED PLASMA [J].
KONDO, K ;
OKAZAKI, K ;
OYAMA, H ;
ODA, T ;
SAKAMOTO, Y ;
IIYOSHI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (08) :1560-1561
[4]  
MATSUO S, 1983, JPN J APPL PHYS, V22, P210
[5]  
ONO T, 1984, JPN J APPL PHYS, V23, P534
[6]  
PICOT M, 1988, REV SCI INSTRUM, V59, P1072
[7]   RADIO-FREQUENCY BIASED MICROWAVE PLASMA-ETCHING TECHNIQUE - A METHOD TO INCREASE SIO2 ETCH RATE [J].
SUZUKI, K ;
NINOMIYA, K ;
NISHIMATSU, S ;
OKUDAIRA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1025-1034
[8]   LOW-TEMPERATURE REACTIVE ION ETCHING AND MICROWAVE PLASMA-ETCHING OF SILICON [J].
TACHI, S ;
TSUJIMOTO, K ;
OKUDAIRA, S .
APPLIED PHYSICS LETTERS, 1988, 52 (08) :616-618
[9]   AN ELECTRON-CYCLOTRON RESONANCE PLASMA DEPOSITION TECHNIQUE EMPLOYING MAGNETRON MODE SPUTTERING [J].
TAKAHASHI, C ;
KIUCHI, M ;
ONO, T ;
MATSUO, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (04) :2348-2352
[10]  
TANAKA M, 1991, P INT SEM REACT PLAS, V41