ALGAINAS/INP 1.5 MU-M MQW DFB LASER-DIODES EXCEEDING 20 GHZ BANDWIDTH

被引：20

作者：

STEINHAGEN, F ^{[1
]}

HILLMER, H ^{[1
]}

LOSCH, R ^{[1
]}

SCHLAPP, W ^{[1
]}

WALTER, H ^{[1
]}

GOBEL, R ^{[1
]}

KUPHAL, E ^{[1
]}

HARTNAGEL, HL ^{[1
]}

BURKHARD, H ^{[1
]}

机构：

[1] DEUTSCH TELEKOM,ZENTRUM FORSCH & TECHNOL,D-64276 DARMSTADT,GERMANY

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 04期

关键词：

DISTRIBUTED FEEDBACK LASERS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19950212

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Buried mushroom multiquantum well DFB laser diodes with compressively strained GaInAs quantum wells and asymmetric confinement layer design are fabricated with a combined MBE/MOCVD technology. Packaged devices exhibit high -3 dB IM bandwidths for very low bias levels and a record bandwidth for this material system of 21 GHz.

引用

页码：274 / 275

页数：2

共 5 条

[1] VERY-LOW CHIRPING OF INGAAS-INGAALAS MQW DFB BRS LASERS UNDER 10 GBIT/S MODULATION [J].

BLEZ, M ;

MATHOORASING, D ;

KAZMIERSKI, C ;

QUILLEC, M ;

GILLERON, M ;

LANDREAU, J ;

NAKAJIMA, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1676-1681

[2] ADVANCED 1.55-MU-M QUANTUM-WELL GAINALAS LASER-DIODES WITH ENHANCED PERFORMANCE [J].

BORCHERT, B ;

GESSNER, R ;

STEGMULLER, B .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (02) :1034-1039

[3] SUPERFAST 1.55-MU-M DFB LASERS [J].

MORTON, PA ;

TANBUNEK, T ;

LOGAN, RA ;

SCIORTINO, PF ;

SERGENT, AM ;

WECHT, KW .

ELECTRONICS LETTERS, 1993, 29 (16) :1429-1430

[4]

NAGARAJAN R, 1994, OPT QUANTUM ELECT, V26, P647

[5] HIGH-PERFORMANCE UNCOOLED 1.3-MU-M ALXGAYIN1-X-YAS/INP STRAINED-LAYER QUANTUM-WELL LASERS FOR SUBSCRIBER LOOP APPLICATIONS [J].

ZAH, CE ;

BHAT, R ;

PATHAK, BN ;

FAVIRE, F ;

LIN, W ;

WANG, MC ;

ANDREADAKIS, NC ;

HWANG, DM ;

KOZA, MA ;

LEE, TP ;

WANG, Z ;

DARBY, D ;

FLANDERS, D ;

HSIEH, JJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :511-523

← 1 →