SUPERFAST 1.55-MU-M DFB LASERS

被引：13

作者：

MORTON, PA

TANBUNEK, T

LOGAN, RA

SCIORTINO, PF

SERGENT, AM

WECHT, KW

机构：

[1] AT&T Bell Laboratories, Murray Hill, NJ 07974

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 16期

关键词：

DISTRIBUTED FEEDBACK LASERS; HIGH-SPEED OPTICAL TECHNIQUES;

D O I：

10.1049/el:19930957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Singlemode 1.55 mum distributed feedback lasers with a modulation bandwidth of 22.5 GHz are reported. The devices use p-doped, strained multiquantum-well active regions to reduce the bandwidth limitations caused by hole transport, as well as increasing the intrinsic response of the device. The present 22.5 GHz bandwidth is limited by device parasitics.

引用

收藏

页码：1429 / 1430

页数：2

相关论文

共 7 条

[1] HIGH-SPEED SEMICONDUCTOR-LASER DESIGN AND PERFORMANCE [J].

BOWERS, JE .

SOLID-STATE ELECTRONICS, 1987, 30 (01) :1-11

[2] EFFECTS OF ZN DOPING ON MODULATION BANDWIDTH OF 1.55 MU-M INGAAS INGAASP MULTIQUANTUM-WELL DFB LASERS [J].

LEALMAN, IF ;

HARLOW, MJ ;

PERRIN, SD .

ELECTRONICS LETTERS, 1993, 29 (13) :1197-1198

[3] EXTREMELY HIGH-FREQUENCY (24 GHZ) INGAASP DIODE-LASERS WITH EXCELLENT MODULATION EFFICIENCY [J].

MELAND, E ;

HOLMSTROM, R ;

SCHLAFER, J ;

LAUER, RB ;

POWAZINIK, W .

ELECTRONICS LETTERS, 1990, 26 (21) :1827-1829

[4] 25 GHZ BANDWIDTH 1.55-MU-M GAINASP P-DOPED STRAINED MULTIQUANTUM-WELL LASERS [J].

MORTON, PA ;

LOGAN, RA ;

TANBUNEK, T ;

SCIORTINO, PF ;

SERGENT, AM ;

MONTGOMERY, RK ;

LEE, BT .

ELECTRONICS LETTERS, 1992, 28 (23) :2156-2157

[5] HIGH-SPEED QUANTUM-WELL LASERS AND CARRIER TRANSPORT EFFECTS [J].

NAGARAJAN, R ;

ISHIKAWA, M ;

FUKUSHIMA, T ;

GEELS, RS ;

BOWERS, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :1990-2008

[6] ELLIPTIC-CORE DUAL-MODE FIBER DISPERSION COMPENSATOR [J].

POOLE, CD ;

WIESENFELD, JM ;

DIGIOVANNI, DJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (02) :194-197

[7] INTRINSIC MODULATION BANDWIDTH IN ULTRA-HIGH-SPEED 1.3-MU-M AND 1.55-MU-M GAINASP DFB LASERS [J].

UOMI, K ;

NAKANO, H ;

CHINONE, N .

ELECTRONICS LETTERS, 1989, 25 (25) :1689-1690