IDEAL BEHAVIOR OF THE OPEN CIRCUIT VOLTAGE OF SEMICONDUCTOR LIQUID JUNCTIONS

被引：90

作者：

ROSENBLUTH, ML ^{[1
]}

LEWIS, NS ^{[1
]}

机构：

[1] CALTECH,DIV CHEM & CHEM ENGN,PASADENA,CA 91125

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1989年 / 93卷 / 09期

关键词：

D O I：

10.1021/j100346a072

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：3735 / 3740

页数：6

共 41 条

[1] SEMICONDUCTOR ELECTRODES .45. PHOTOELECTROCHEMISTRY OF N-TYPE AND P-TYPE MOTE2 IN AQUEOUS-SOLUTIONS
ABRUNA, HD
HOPE, GA
BARD, AJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2224 - 2228
[2] [Anonymous], SEMICONDUCTOR ELECTR
[3] A COMPARISON OF THE INTERFACE ENERGETICS FOR N-TYPE CADMIUM SULFIDE-NONAQUEOUS AND CADMIUM TELLURIDE-NONAQUEOUS ELECTROLYTE JUNCTIONS
ARUCHAMY, A
WRIGHTON, MS
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1980, 84 (22) : 2848 - 2854
[4] P-TYPE AMORPHOUS-SILICON LIQUID JUNCTION SOLAR-CELL
AYERS, WM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) : 1644 - 1646
[5] ELECTROCHEMICAL CHARACTERIZATION OF PARA-TYPE SEMICONDUCTING TUNGSTEN DISULFIDE PHOTO-CATHODES - EFFICIENT PHOTO-REDUCTION PROCESSES AT SEMICONDUCTOR LIQUID ELECTROLYTE INTERFACES
BAGLIO, JA
CALABRESE, GS
HARRISON, DJ
KAMIENIECKI, E
RICCO, AJ
WRIGHTON, MS
ZOSKI, GD
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1983, 105 (08) : 2246 - 2256
[6] CHARACTERIZATION OF N-TYPE SEMICONDUCTING TUNGSTEN DISULFIDE PHOTO-ANODES IN AQUEOUS AND NON-AQUEOUS ELECTROLYTE-SOLUTIONS - PHOTOOXIDATION OF HALIDES WITH HIGH-EFFICIENCY
BAGLIO, JA
CALABRESE, GS
KAMIENIECKI, E
KERSHAW, R
KUBIAK, CP
RICCO, AJ
WOLD, A
WRIGHTON, MS
ZOSKI, GD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) : 1461 - 1472
[7] ON THE ROLE OF SURFACE-STATES IN SEMICONDUCTOR ELECTRODE PHOTOELECTROCHEMICAL CELLS
BARD, AJ
FAN, FRF
GIODA, AS
NAGASUBRAMANIAN, G
WHITE, HS
[J]. FARADAY DISCUSSIONS, 1980, 70 : 19 - +
[8] THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES
BARD, AJ
BOCARSLY, AB
FAN, FRF
WALTON, EG
WRIGHTON, MS
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3671 - 3677
[9] PHOTO-REDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES - EVIDENCE FOR FERMI LEVEL PINNING
BOCARSLY, AB
BOOKBINDER, DC
DOMINEY, RN
LEWIS, NS
WRIGHTON, MS
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3683 - 3688
[10] PHOTOELECTROCHEMISTRY OF N-TYPE AND P-TYPE SILICON IN ACETONITRILE
BYKER, HJ
WOOD, VE
AUSTIN, AE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 1982 - 1987

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