PHOTOELECTROCHEMISTRY OF N-TYPE AND P-TYPE SILICON IN ACETONITRILE

[1] THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3671 - 3677

[2] USE OF CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES IN AQUEOUS-MEDIA - PHOTO-OXIDATION OF IODIDE, HEXACYANOIRON(II), AND HEXAAMMINERUTHENIUM(II) AT FERROCENE-DERIVATIZED PHOTOANODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (10) : 3390 - 3398

[3] PHOTO-REDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES - EVIDENCE FOR FERMI LEVEL PINNING [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3683 - 3688

[4] CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES - STABILIZATION TO SURFACE CORROSION IN AQUEOUS-ELECTROLYTE SOLUTIONS AND MEDIATION OF OXIDATION REACTIONS BY SURFACE-ATTACHED ELECTROACTIVE FERROCENE REAGENTS [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1979, 101 (06) : 1378 - 1385

[5] SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION [J]. SURFACE SCIENCE, 1979, 88 (01) : 204 - 220

[6] A QUANTITATIVE STUDY OF FERMI LEVEL PINNING AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1980, 114 (02) : 299 - 303

[7] SPECTROPHOTOMETRIC DETERMINATION OF RUTHENIUM WITH 2 4 6-TRI(2'-PYRIDYL)-S-TRIAZINE [J]. ANALYTICAL CHEMISTRY, 1968, 40 (10) : 1499 - &

[8] FLEISCHMANN M, 1968, TETRAHEDRON LETT, P6255

[9] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289

[10] GERISCHER H, 1970, PHYSICAL CHEM A, V9

[1] THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3671 - 3677

[2] USE OF CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES IN AQUEOUS-MEDIA - PHOTO-OXIDATION OF IODIDE, HEXACYANOIRON(II), AND HEXAAMMINERUTHENIUM(II) AT FERROCENE-DERIVATIZED PHOTOANODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (10) : 3390 - 3398

[3] PHOTO-REDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES - EVIDENCE FOR FERMI LEVEL PINNING [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3683 - 3688

[4] CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES - STABILIZATION TO SURFACE CORROSION IN AQUEOUS-ELECTROLYTE SOLUTIONS AND MEDIATION OF OXIDATION REACTIONS BY SURFACE-ATTACHED ELECTROACTIVE FERROCENE REAGENTS [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1979, 101 (06) : 1378 - 1385

[5] SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION [J]. SURFACE SCIENCE, 1979, 88 (01) : 204 - 220

[6] A QUANTITATIVE STUDY OF FERMI LEVEL PINNING AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1980, 114 (02) : 299 - 303

[7] SPECTROPHOTOMETRIC DETERMINATION OF RUTHENIUM WITH 2 4 6-TRI(2'-PYRIDYL)-S-TRIAZINE [J]. ANALYTICAL CHEMISTRY, 1968, 40 (10) : 1499 - &

[8] FLEISCHMANN M, 1968, TETRAHEDRON LETT, P6255

[9] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289

[10] GERISCHER H, 1970, PHYSICAL CHEM A, V9