SELF-DIFFUSION IN SILICON AS PROBED BY THE (P,GAMMA) RESONANCE BROADENING METHOD

被引：53

作者：

HIRVONEN, J

ANTTILA, A

机构：

[1] Department of Physics, University of Helsinki, Helsinki

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期

关键词：

D O I：

10.1063/1.91261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The self-diffusion preexponential factor D0=8.0 cm2/s and activation energy Q=4.1 eV for intrinsic silicon have been determined with the (p,γ) resonance broadening method in the temperature region 900-1100°C, in a first application of this method to self-diffusion measurements. Its suitability was tested by extending the self-diffusion measurements to lower temperatures than those performed with other methods.

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页码：703 / 705

页数：3

相关论文

共 14 条

[1] ANNEALING BEHAVIOR OF NITROGEN-IMPLANTED PROTON-IRRADIATED MOLYBDENUM [J].

ANTTILA, A ;

HIRVONEN, J .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :394-396

[2] RANGES OF SOME LIGHT-IONS MEASURED BY (P, GAMMA) RESONANCE BROADENING [J].

ANTTILA, A ;

BISTER, M ;

FONTELL, A ;

WINTERBON, KB .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (01) :13-19

[3] ENHANCED DIFFUSION MECHANISMS [J].

BOURGOIN, JC ;

CORBETT, JW .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :157-188

[4] ENERGY-LEVELS OF A = 21-44 NUCLEI .5. [J].

ENDT, PM ;

VANDERLE.C .

NUCLEAR PHYSICS A, 1973, A214 (OCT29) :1-625

[5] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].

FAIRFIEL.JM ;

MASTERS, BJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&

[6] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J].

GHOSHTAGORE, RN .

PHYSICAL REVIEW LETTERS, 1966, 16 (20) :890-+

[7] DEFECT FLOW INDUCED OUT-DIFFUSION IN A1-]ZN IMPLANTATIONS [J].

HIRVONEN, J ;

ANTTILA, A ;

HAUTALA, M .

PHYSICS LETTERS A, 1978, 66 (03) :226-228

[8]

HIRVONEN J, 1979, SCR METALL, V11, P1139

[9]

MAYER HJ, 1977, RAD EFFECTS SEMICOND, P186

[10] SELF DIFFUSION IN INTRINSIC SILICON [J].

PEART, RF .

PHYSICA STATUS SOLIDI, 1966, 15 (02) :K119-&