TUNABLE DIFFERENTIAL-INPUT GALLIUM-ARSENIDE TRANSCONDUCTORS

被引:2
作者
HAIGH, DG [1 ]
TOUMAZOU, C [1 ]
机构
[1] IMPERIAL COLL SCI TECHNOL & MED,LONDON SW7 2BT,ENGLAND
关键词
CIRCUIT DESIGN; GALLIUM ARSENIDE;
D O I
10.1049/el:19910098
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Three architectures are proposed for differential input transconductors which make use of a recently proposed current mirror and which provide simple transconductance tuning by control of a differential-pair tail current. Measured results confirm the linearity of the current mirror and simulation is used to evaluate the transconductors. One architecture having a high degree of symmetry is advantageous from the points of view of low feedthrough of the control signal, good linearity, wide differential-mode bandwidth and high common-mode rejection ratio.
引用
收藏
页码:151 / 153
页数:3
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