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HIGH-FIELD ELECTRON-TRANSPORT IN SILICON-ON-SAPPHIRE LAYERS
被引:8
作者
:
COOK, RK
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NAT RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NAT RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
COOK, RK
[
1
]
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NAT RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NAT RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
FREY, J
[
1
]
机构
:
[1]
CORNELL UNIV,NAT RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
来源
:
JOURNAL OF APPLIED PHYSICS
|
1980年
/ 51卷
/ 05期
关键词
:
D O I
:
10.1063/1.327997
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2656 / 2658
页数:3
相关论文
共 8 条
[1]
HSU ST, 1975, RCA REV, V36, P240
[2]
ELECTRON-MOBILITY IN SOS FILMS
[J].
HSU, ST
论文数:
0
引用数:
0
h-index:
0
HSU, ST
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(08)
:913
-916
[3]
VARIATIONS IN ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE
[J].
IPRI, AC
论文数:
0
引用数:
0
h-index:
0
IPRI, AC
.
APPLIED PHYSICS LETTERS,
1972,
20
(01)
:1
-&
[4]
REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON
[J].
JACOBONI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
JACOBONI, C
;
CANALI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
CANALI, C
;
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
OTTAVIANI, G
;
QUARANTA, AA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
QUARANTA, AA
.
SOLID-STATE ELECTRONICS,
1977,
20
(02)
:77
-89
[5]
NAG BR, 1972, THEORY ELECTRICAL TR, P115
[6]
EFFECT OF SILICON FILM THICKNESS ON THRESHOLD VOLTAGE OF SOS-MOSFETS
[J].
SASAKI, N
论文数:
0
引用数:
0
h-index:
0
机构:
IC Division, Fujitsu Limited, Kawasaki
SASAKI, N
;
TOGEI, R
论文数:
0
引用数:
0
h-index:
0
机构:
IC Division, Fujitsu Limited, Kawasaki
TOGEI, R
.
SOLID-STATE ELECTRONICS,
1979,
22
(04)
:417
-421
[7]
PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION
[J].
WADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
WADA, T
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
FREY, J
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(02)
:398
-412
[8]
SERIES RESISTANCE EFFECTS IN SEMICONDUCTOR CV PROFILING
[J].
WILEY, JD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
WILEY, JD
;
MILLER, GL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
MILLER, GL
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(05)
:265
-272
←
1
→
共 8 条
[1]
HSU ST, 1975, RCA REV, V36, P240
[2]
ELECTRON-MOBILITY IN SOS FILMS
[J].
HSU, ST
论文数:
0
引用数:
0
h-index:
0
HSU, ST
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(08)
:913
-916
[3]
VARIATIONS IN ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE
[J].
IPRI, AC
论文数:
0
引用数:
0
h-index:
0
IPRI, AC
.
APPLIED PHYSICS LETTERS,
1972,
20
(01)
:1
-&
[4]
REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON
[J].
JACOBONI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
JACOBONI, C
;
CANALI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
CANALI, C
;
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
OTTAVIANI, G
;
QUARANTA, AA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
QUARANTA, AA
.
SOLID-STATE ELECTRONICS,
1977,
20
(02)
:77
-89
[5]
NAG BR, 1972, THEORY ELECTRICAL TR, P115
[6]
EFFECT OF SILICON FILM THICKNESS ON THRESHOLD VOLTAGE OF SOS-MOSFETS
[J].
SASAKI, N
论文数:
0
引用数:
0
h-index:
0
机构:
IC Division, Fujitsu Limited, Kawasaki
SASAKI, N
;
TOGEI, R
论文数:
0
引用数:
0
h-index:
0
机构:
IC Division, Fujitsu Limited, Kawasaki
TOGEI, R
.
SOLID-STATE ELECTRONICS,
1979,
22
(04)
:417
-421
[7]
PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION
[J].
WADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
WADA, T
;
FREY, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
FREY, J
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(02)
:398
-412
[8]
SERIES RESISTANCE EFFECTS IN SEMICONDUCTOR CV PROFILING
[J].
WILEY, JD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
WILEY, JD
;
MILLER, GL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
MILLER, GL
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(05)
:265
-272
←
1
→