NEW DEVICE DEGRADATION DUE TO COLD CARRIERS CREATED BY BAND-TO-BAND TUNNELING

被引：33

作者：

IGURA, Y ^{[1
]}

MATSUOKA, H ^{[1
]}

TAKEDA, E ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 05期

关键词：

D O I：

10.1109/55.31729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：227 / 229

页数：3

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