HIGH-POWER AND HIGH-SPEED CHARACTERISTICS OF MODIFIED HETEROSTRUCTURE IREDS

被引：5

作者：

ONO, Y

MORI, M

ITO, K

KURATA, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 10期

关键词：

D O I：

10.1109/T-ED.1981.20508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1183 / 1187

页数：5

共 14 条

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[9] NEAR-INFRARED HIGH-POWER LEDS WITH GA1-XALXAS EPITAXIALLY GROWN JUNCTIONS [J].

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[10]

KURATA K, UNPUBLISHED

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