ANALYSES OF LED NON-LINEAR DISTORTIONS

被引：13

作者：

ASATANI, K

KIMURA, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 02期

关键词：

D O I：

10.1109/T-ED.1978.19060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：199 / 207

页数：9

共 22 条

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS [J].

AFROMOWITZ, MA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1292-1294

[2] LINEARIZATION OF LED NONLINEARITY BY PREDISTORTIONS [J].

ASATANI, K ;

KIMURA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :207-212

[3]

ASATANI K, 1977, JUL INT C INT OPT OP

[4] LIGHT-EMITTING DIODES [J].

BERGH, AA ;

DEAN, PJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02) :156-+

[5] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].

CASEY, HC ;

STERN, F .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643

[6] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

CASEY, HC ;

MILLER, BI ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287

[7]

CAVANAUGH JR, 1971, J SMPTE, V80, P614

[8] INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES [J].

ETTENBERG, M ;

KRESSEL, H .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1538-1544

[9]

FIRL TE, 1959, IRE T ELECTRON DEV, V6, P330

[10] EFFECT OF HIGHER ABSORPTION IN NON-LASING GAAS DIODES AT 300 DEGREES K [J].

GONDA, T ;

LAMORTE, MF ;

NYUL, P ;

JUNKER, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1966, QE 2 (04) :74-+

← 1 2 3 →