NEAR-INFRARED HIGH-POWER LEDS WITH GA1-XALXAS EPITAXIALLY GROWN JUNCTIONS

被引：14

作者：

KURATA, K ^{[1
]}

ONO, Y ^{[1
]}

MORIOKA, M ^{[1
]}

ITO, K ^{[1
]}

MORI, M ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 07期

关键词：

D O I：

10.1109/JQE.1977.1069384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：525 / 531

页数：7

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Ono Y., 1976, Hitachi Review, V25, P129

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