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FREQUENCY-RESOLVED CAPACITANCE SPECTROSCOPY - A NEW APPROACH TO MEASURING DEEP LEVELS IN SEMICONDUCTORS

被引：4
作者：
HOMEWOOD, KP
BENYON, RP
机构：
来源：
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1988年 / 21卷 / 11期
关键词：
D O I：
10.1088/0022-3735/21/11/003
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
7
引用
收藏
页码：1022 / 1024
页数：3
相关论文
共 6 条
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[3]  
DUNSTAN DJ, 1982, J PHYS C SOLID STATE, V30, pL425
[4]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
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[5]   ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS [J].
LOSEE, DL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2204-2214
[6]   PHOTOCONDUCTIVITY MEASUREMENTS IN A-SI-H BY FREQUENCY-RESOLVED SPECTROSCOPY [J].
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IRSIGLER, P ;
DUNSTAN, DJ .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (36) :6793-6799
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