MONTE-CARLO CALCULATION OF MICROWAVE AND FAR-INFRARED HOT-CARRIE MOBILITY IN N-SI - EFFICIENCY OF MILLIMETER TRANSITIME OSCILLATORS

A Monte Carlo simulation is proposed and applied to study high-frequency behavior of hot carriers in semiconductors subjected to an arbitrary ac field superimposed on a strong dc field. With this end in view, the classical method was slightly modified into a mesh method: instead of testing the time spent between successive collisions, the scattering probabilities are tested after every time interval of suitable duration. This method checked by applying a static electric field allows us to obtain a few new results. Microwave and far-infrared room-temperature hot-carrier mobility for n-silicon is calculated and discussed. As an example of application, numerical results are used in the calculation of efficiency in millimeter transit-time oscillators which is shown to decrease in the millimeter range.