THE ROLE OF CRYSTAL-GROWTH PROPERTIES ON SILICON IMPLANT ACTIVATION PROCESSES FOR GAAS

被引：6

作者：

GRAY, ML

PARSEY, JM

PEARTON, SJ

SHORT, KT

AHRENS, RE

SARGENT, L

BLAKEMORE, JS

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] OREGON GRAD CTR,BEAVERTON,OR 97006

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1464 / 1467

页数：4

共 11 条

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[7] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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[9] OPTICAL CHARACTERIZATION OF SEMIINSULATING GAAS - DETERMINATION OF THE FERMI ENERGY, THE CONCENTRATION OF THE MIDGAP EL2 LEVEL AND ITS OCCUPANCY [J].

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[10] EFFECT OF MELT STOICHIOMETRY ON ELECTRICAL ACTIVATION UNIFORMITY OF SI-IMPLANTED LAYERS IN UNDOPED SEMI-INSULATING GAAS [J].

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