ELECTRIC-FIELD AND IMPURITY CONCENTRATION EFFECTS ON THE IONIZATION-ENERGY OF IMPURITIES - APPLICATION TO ACCEPTORS IN ZNTE

被引：25

作者：

PAUTRAT, JL

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 06期

关键词：

D O I：

10.1016/0038-1101(80)90052-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：661 / 670

页数：10

共 29 条

[11] POOLE-FRENKEL CONDUCTION IN AMORPHOUS SOLIDS [J].

HILL, RM .

PHILOSOPHICAL MAGAZINE, 1971, 23 (181) :59-&

[12]

KATIRCIOGLU B, 1978, THESIS GRENOBLE

[13]

KUKIMOTO A, 1973, PHYS REV B, V7, P2499

[14] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

[15] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].

LAX, M .

PHYSICAL REVIEW, 1960, 119 (05) :1502-1523

[16] ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS [J].

LOSEE, DL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2204-2214

[17] OPTICAL-IDENTIFICATION OF SUBSTITUTIONAL ACCEPTORS IN REFINED ZNTE [J].

MAGNEA, N ;

BENSAHEL, D ;

PAUTRAT, JL ;

PFISTER, JC .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1979, 94 (02) :627-639

[18] FIELD-DEPENDENCE OF CAPTURE AND RE-EMISSION OF CHARGE-CARRIERS BY SHALLOW LEVELS IN GERMANIUM AND SILICON [J].

MARTINI, M ;

MCMATH, TA .

SOLID-STATE ELECTRONICS, 1973, 16 (02) :129-&

[19]

Milnes A., 1973, DEEP IMPURITIES SEMI

[20]

MIRCEA A, 1979, J PHYS LETT-PARIS, V40, pL31, DOI 10.1051/jphyslet:0197900400203100

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