ANOMALE FLUBCHARAKTERISTIKEN VON RHO-NU-UBERGANGEN IN SILIZIUM

[1] RADIATION FROM GAAS TUNNEL DIODES [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (04) : 610 - &

[2] AZIZOV M, 1960, IAN UZB SSR FIZ MAT, V2, P78

[3] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518

[4] BERNARD M, 1957, J ELECTRONICS, V2, P579

[5] PRECIPITATION IN SILICON CRYSTALS CONTAINING ALUMINUM [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (04) : 707 - 714

[6] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[7] COPPEN DJ, 1962, IRE T, VED9, P75

[8] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[9] EVANS DAP, UNPUBLISHED

[10] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[1] RADIATION FROM GAAS TUNNEL DIODES [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (04) : 610 - &

[2] AZIZOV M, 1960, IAN UZB SSR FIZ MAT, V2, P78

[3] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518

[4] BERNARD M, 1957, J ELECTRONICS, V2, P579

[5] PRECIPITATION IN SILICON CRYSTALS CONTAINING ALUMINUM [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (04) : 707 - 714

[6] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[7] COPPEN DJ, 1962, IRE T, VED9, P75

[8] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[9] EVANS DAP, UNPUBLISHED

[10] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824