INSITU AND EXSITU CHARACTERIZATION OF GAAS/ALAS QUANTUM-WELL STRUCTURES USING SPECTROSCOPIC ELLIPSOMETRY

被引：5

作者：

EDWARDS, JL

MARACAS, GN

SHIRALAGI, KT

CHOI, KY

DROOPAD, R

机构：

[1] Center for Solid State Electronics Research, Arizona State University, Tempe

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90367-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Spectroscopic ellipsometer is used to monitor the MBE growth of quantum well structures. Real time monitoring of the growth enabled the measurement of growth rate and correlation with RHEED oscillations. The growth of a single GaAs/AlAs quantum well is also monitored in real time using multiple wavelengths. Interface roughness of the interrupted "inverted" AlAs/GaAs interface was also monitored with SE. Under our growth conditions, we measure approximately a 2 ML interfacial region at the inverted interface. A correlation with photoluminescence is also discussed.

引用

页码：78 / 83

页数：6

共 14 条

[1] APPLICATION OF ELLIPSOMETRY TO CRYSTAL-GROWTH BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY [J].