OBSERVATION OF PHOSPHORUS PILE-UP AT SIO2-SI INTERFACE

被引：62

作者：

JOHANNESSEN, JS ^{[1
]}

SPICER, WE ^{[1
]}

GIBBONS, JF ^{[1
]}

PLUMMER, JD ^{[1
]}

TAYLOR, NJ ^{[1
]}

机构：

[1] VARIAN ASSOC,PALO ALTO,CA 94303

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 08期

关键词：

D O I：

10.1063/1.325502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4453 / 4458

页数：6

共 20 条

[1] PHOSPHORUS CONCENTRATION PROFILES IN P-DOPED SILICON DIOXIDE MEASURED USING AUGER-SPECTROSCOPY [J].

CHANG, CC ;

ADAMS, AC ;

QUINTANA, G ;

SHENG, TT .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :252-256

[2] AUGER AND ELLIPSOMETRIC STUDY OF PHOSPHORUS SEGREGATION IN OXIDIZED DEGENERATE SILICON [J].

CHOU, NJ ;

VANDERME.YJ ;

HAMMER, R ;

CAHILL, J .

APPLIED PHYSICS LETTERS, 1974, 24 (04) :200-202

[3] THERMAL OXIDATION OF HEAVILY DOPED SILICON [J].

DEAL, BE ;

SKLAR, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) :430-+

[4] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J].

DEAL, BE ;

GROVE, AS ;

SNOW, EH ;

SAH, CT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :308-&

[5]

DICKY DH, 1974, 1974 SPREAD RES S GA

[6] DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES [J].

DISTEFANO, TH .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :527-528

[7]

DISTEFANO TH, 1975, 4 ARPA NBS WORKSH SU

[8] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

GROVE, AS ;

SAH, CT ;

LEISTIKO, O .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&

[9]

HO CY, UNPUBLISHED

[10] DEPTH PROFILES BY ESCA [J].

IWASAKI, H ;

NAKAMURA, S .

SURFACE SCIENCE, 1976, 57 (02) :779-780

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