SWITCHING TIME CONTROL ON BIPOLAR POWER TRANSISTORS BY ELECTRON-IRRADIATION

被引：3

作者：

ARCORIA, G ^{[1
]}

PATTI, A ^{[1
]}

FUOCHI, PG ^{[1
]}

机构：

[1] CNR,INST FRAE,I-40126 BOLOGNA,ITALY

来源：

RADIATION PHYSICS AND CHEMISTRY | 1993年 / 42卷 / 4-6期

关键词：

POWER TRANSISTOR; LIFETIME CONTROL; ELECTRON IRRADIATION; DEFECT STABILIZATION;

D O I：

10.1016/0969-806X(93)90424-S

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-frequency operation of electronic lamp ballasts is made possible by the controlled reduction of carrier lifetime in the base-collector junction of the two power transistors present in the circuit. The electron irradiation allows excellent control of the lifetime and, as a consequence, of the power transistors storage time on which the main operation parameters, working frequency and lamp power, depend. The recovery of the radiation induced defects, caused by the thermal processes that the irradiated devices undergo during packaging operations, has been investigated.

引用

页码：1015 / 1018

页数：4

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[4]

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[5]

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