CURRENT OSCILLATIONS IN HIGH-RESISTIVITY SILICON WITH DEEP LEVELS

[11] CARRIER TRANSPORT AND POTENTIAL DISTRIBUTIONS FOR A SEMICONDUCTOR P-N JUNCTION IN RELAXATION REGIME [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (10) : 551 - &

[12] MINORITY CARRIER INJECTION AND CHARGE STORAGE IN EPITAXIAL SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 299 - +

[13] STOCKMANN F, 1961, HALBLEITERPROBLEME, V6, P279

[14] CURRENT OSCILLATIONS IN CO-DOPED SI P-I-N STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1967, 11 (06) : 200 - +

[11] CARRIER TRANSPORT AND POTENTIAL DISTRIBUTIONS FOR A SEMICONDUCTOR P-N JUNCTION IN RELAXATION REGIME [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (10) : 551 - &

[12] MINORITY CARRIER INJECTION AND CHARGE STORAGE IN EPITAXIAL SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 299 - +

[13] STOCKMANN F, 1961, HALBLEITERPROBLEME, V6, P279

[14] CURRENT OSCILLATIONS IN CO-DOPED SI P-I-N STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1967, 11 (06) : 200 - +