COEXISTENCE OF THE DX CENTER AND OTHER SI-RELATED ELECTRON BOUND-STATES IN ALXGA1-XAS

被引：4

作者：

BARALDI, A

FRIGERI, P

GHEZZI, C

PARISINI, A

BOSACCHI, A

FRANCHI, S

GOMBIA, E

MOSCA, R

机构：

[1] UNIV PARMA,DIPARTIMENTO FIS,I-43100 PARMA,ITALY

[2] CNR,IST MASPEC,I-43100 PARMA,ITALY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

HALL EFFECT; DOPING EFFECTS; GALLIUM ARSENIDE; ELECTRICAL MEASUREMENTS;

D O I：

10.1016/0921-5107(94)90095-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The coexistence of the DX center with other donor-related bound states has been investigated in Si-doped direct gap AlxGai-xAs, by comparing electron denisty data obtained by capacitance/voltage and Hall measurements. The experiments were carried out under saturated persistent photoconductivity conditions, as well as during isothermal capture transients. A D degrees bound state degenerated in energy with the conduction band is populated through low temperature photo-ionization of the DX center. The D degrees level comes very close in energy to the Gamma minimum when the direct-to-indirect gap transition is approached. Under defined conditions, the final stage of isothermal capture transients is dominated by the electron freezing into hydrogenic bound states linked to Gamma.

引用

页码：412 / 415

页数：4

共 16 条

[1] LOW-TEMPERATURE OCCUPATION OF A DONOR STATE RESONANT WITH THE CONDUCTION-BAND IN AL0.35GA0.65AS [J].