CHARACTERIZATION OF THE DX CENTER IN THE INDIRECT ALXGA1-XAS ALLOY

[1] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492

[2] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 656 - 658

[3] A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12): : L928 - L931

[4] LAND DV, 1979, PHYS REV B, V19, P1015

[5] LANG DV, 1977, PHYS REV LETT, V39, P365

[6] PRESSURE AND COMPOSITIONAL DEPENDENCES OF THE HALL-COEFFICIENT IN ALXGA1-XAS AND THEIR SIGNIFICANCE [J]. PHYSICAL REVIEW B, 1980, 21 (02) : 670 - 678

[7] SMALL LATTICE-RELAXATION AT THE DX CENTER AS STUDIED BY EXTENDED X-RAY ABSORPTION FINE-STRUCTURE ON SE-DOPED ALGAAS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 126 - 128

[8] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L143 - L146

[9] MOONEY PM, 1986, DEFECTS SEMICONDUCTO

[10] THEORY OF THE DX CENTER IN ALXGA1-XAS AND GAAS CRYSTALS [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2664 - 2669

[1] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492

[2] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 656 - 658

[3] A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12): : L928 - L931

[4] LAND DV, 1979, PHYS REV B, V19, P1015

[5] LANG DV, 1977, PHYS REV LETT, V39, P365

[6] PRESSURE AND COMPOSITIONAL DEPENDENCES OF THE HALL-COEFFICIENT IN ALXGA1-XAS AND THEIR SIGNIFICANCE [J]. PHYSICAL REVIEW B, 1980, 21 (02) : 670 - 678

[7] SMALL LATTICE-RELAXATION AT THE DX CENTER AS STUDIED BY EXTENDED X-RAY ABSORPTION FINE-STRUCTURE ON SE-DOPED ALGAAS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 126 - 128

[8] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L143 - L146

[9] MOONEY PM, 1986, DEFECTS SEMICONDUCTO

[10] THEORY OF THE DX CENTER IN ALXGA1-XAS AND GAAS CRYSTALS [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2664 - 2669