ELECTRON-EMISSION FROM PHOSPHORUS-DOPED AND BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS

被引：97

作者：

OKANO, K

GLEASON, KK

机构：

[1] Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 01期

关键词：

DIAMOND; ELECTRON EMISSION; ELECTRON FIELD EMISSION;

D O I：

10.1049/el:19950027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron emission from CVD-grown phosphorus (P)- and boron (B)-doped polycrystalline diamond films has been studied. The current density against electric field characteristics of the P-doped film showed low-field emission compared to the B-doped film. From the slope ratio of the Fowler-Nordheim (F-N) characteristics of P- and B-doped films, a ratio of 0.66 for the emission barrier height was obtained. The small ratio might be caused by the n-type semiconducting properties of P-doped diamond films.

引用

页码：74 / 75

页数：2

共 13 条

[1] AOKI M, 1994, IN PRESS JPN J APPL
[2] CAPACITANCE-VOLTAGE MEASUREMENTS ON METAL-SIO2-DIAMOND STRUCTURES FABRICATED WITH (100)-ORIENTED AND (111)-ORIENTED SUBSTRATES
GEIS, MW
GREGORY, JA
PATE, BB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) : 619 - 626
[3] DIAMOND COLD-CATHODE
GEIS, MW
EFREMOW, NN
WOODHOUSE, JD
MCALEESE, MD
MARCHYWKA, M
SOCKER, DG
HOCHEDEZ, JF
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 456 - 459
[4] QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER
HIMPSEL, FJ
KNAPP, JA
VANVECHTEN, JA
EASTMAN, DE
[J]. PHYSICAL REVIEW B, 1979, 20 (02): : 624 - 627
[5] SYNTHESIS OF N-TYPE SEMICONDUCTING DIAMOND FILM USING DIPHOSPHORUS PENTAOXIDE AS THE DOPING SOURCE
OKANO, K
KIYOTA, H
IWASAKI, T
NAKAMURA, Y
AKIBA, Y
KUROSU, T
IIDA, M
NAKAMURA, T
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 51 (04): : 344 - 346
[6] SYNTHESIS OF DIAMOND THIN-FILMS HAVING SEMICONDUCTIVE PROPERTIES
OKANO, K
NARUKI, H
AKIBA, Y
KUROSU, T
IIDA, M
HIROSE, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02): : L173 - L175
[7] OKANO K, 1993, DIAM RELAT MATER, V3, P35
[8] FORMATION OF SURFACE-STATES ON THE (111) SURFACE OF DIAMOND
PATE, BB
STEFAN, PM
BINNS, C
JUPITER, PJ
SHEK, ML
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 349 - 354
[9] THEORY OF FIELD EMISSION FROM SEMICONDUCTORS
STRATTON, R
[J]. PHYSICAL REVIEW, 1962, 125 (01): : 67 - &
[10] FIELD EMISSION FROM SEMICONDUCTORS
STRATTON, R
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (10): : 746 - 757

← 1 2 →