LOCAL GROWTH OF HGCDTE LAYERS BY ISOTHERMAL VAPOR-PHASE EPITAXY

被引：2

作者：

DJURIC, Z

DJINOVIC, Z

JAKSIC, Z

TOTOVSKI, D

机构：

[1] Inst of Microelectronic Technologies, and Single Crystals

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

D O I：

10.1049/el:19900651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The isothermal vapour phase epitaxy was used for local growth of epitaxial HgCdTe layers on a CdZnTe substrate. The growth was realised at the openings (windows) in CVD deposited SiOx mask. The procedure enables the production of local epitaxial structures, convenient for the fabrication of single and multi-element infrared detectors.

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页码：1005 / 1006

页数：2

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